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Bulletin I27091 rev.A 09/97
IRK.F112.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-paka Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
112 A
Description
These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz It
2
IRK.F112..
112 90 250 3090 3237 47.8 43.6 478 10 and 15 2 up to 800 - 40 to 125
Units
A C A A A KA 2s KA 2s KA 2s s s V
o
@ 50Hz @ 60Hz
I 2t tq t rr VDRM / V RRM TJ range
C
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1
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 08
VRRM/VDRM, maximum repetitive peak reverse voltage V
400 800
VRSM , maximum nonrepetitive peak rev. voltage V
400 800
IRRM/I DRM max.
@ T J = 125C
mA
30
IRK.F112.. Series
Current Carrying Capacity
ITM 180oel 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 220 285 205 175 125 50 80% VDRM 50 60 90 220 285 205 170 120 50 180 el 350 425 350 295 230 50 550 695 550 448 337 50 80% VDRM 60 90
o
Frequency f
ITM 100s 2060 1230 460 295 50
ITM
Units
2900 1785 552 448 50
A A A A A V V
80% VDRM 60
A/ s C
47 / 0.22 F
47 / 0.22 F
47 / 0.22 F
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current
IRK.F112..
112 90 250 3090 3237 2600 2720
Units Conditions
A C A A TC = 90C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125C 180 conduction, half sine wave
I2t
Maximum I2 t for fusing
47.8 43.6 33.8 30.8
I2 t
Maximum I2 t for fusing
478 1.19 1.43 1.67 1.12 1.77 600 1000
KA2s t = 0 to 10ms, no voltage reapplied V (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. mW (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. V mA mA Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse TJ = 25C, IT > 30 A TJ = 25C, VA = 12V, Ra = 6, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
IRK.F112..
800
Units Conditions
A/s Gate drive 20V, 20, tr 1ms, VD= 80% VDRM T J = 125C ITM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25C ITM = 350A, T J = 125C, di/dt = -25A/s, s VR = 50V, dv/dt = 400V/s linear to 80% V DRM
t
rr
Maximum recovery time Maximum turn-off time N 10
2 L 15
s
tq
Blocking
Parameter
dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 30 V mA 50 Hz, circuit to base, TJ = 25C, t = 1 s TJ = 125C, rated VDRM/VRRM applied
IRK.F112..
1000
Units Conditions
V/s TJ = 125C., exponential to 67% VDRM
Triggering
Parameter
P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger
IRK.F112..
60 10 10 5 200 3 20 0.25
Units Conditions
W W A V mA V mA V TJ = 125C, rated VDRM applied TJ = 25C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125C, f = 50Hz, d% = 50 TJ = 125C, tp < 5ms
Thermal and Mechanical Specifications
Parameter
TJ T stg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque 10% IAP to heatsink busbar to IAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.035 K/W Mounting surface flat and greased Per module
A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound
IRK.F112..
- 40 to 125 - 40 to 150 0.17
Units Conditions
C
K/W
Per junction, DC operation
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
0.015 0.018 0.024 0.036 0.060 0.012 0.020 0.027 0.037 0.060
Units
K/W
Conditions
TJ = 125C
Ordering Information Table
Device Code
IRK
1 1 2 3 4 5 - Module type - Circuit configuration - Fast SCR
T
2
F
3
11
4
2
5
-
08
6
H
7
L
8
N
9
- Current rating: IT(AV) x 10 rounded - 1= 2= option with spacers and longer terminal screws option with standard terminal screws
6 7 8
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H 400V/s - tq code: N 10s L 15s - None = Standard devices N = Aluminum nitrade substrate
9
NOTE: To order the Optional Hardware see Bulletin I27900
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0
For all types IRK...1 IRK...2
A 25 (0.98) 23 (0.91)
B ---30 (1.18)
C ---36 (1.42)
D 41 (1.61) ----
E 47 (1.85) ----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
130 IRK.F112.. Series R thJC(DC) = 0.17 K/W 120
130 120 110
Conduction Period
IRK.F112.. Series R thJC (DC) = 0.17 K/W
110
Conduction Angle
100 90 80 70 0 40 80 120 160 200 Average On-state Current (A) 30 60 90 120 180 DC
100 30 60 90 90 120 180 80 0 20 40 60 80 100 120 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Maximum Average On-state Power Loss (W) 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Average On-state Current (A)
Conduction Angle
Maximum Average On-state Power Loss (W)
280 240 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A) IRK.F112.. Series Per Junct ion T J = 125C RMS Limit
Conduction Period
180 120 90 60 30
DC 180 120 90 60 30
RMS Limit
IRK.F112.. Series Per Junction T J= 125C
Fig. 3 - On-state Power Loss Characteristics
2800 2600 2400 2200 2000 1800 1600 1400 1200 1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - On-state Power Loss Characteristics
3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 IRK.F112.. Series Per Junction 0.1 Pulse Train Duration (s) 1
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125C No Voltage Reapplied Rated V RRMReapplied
IRK.F112.. Series Per Junction
1200 0.01
Fig. 5 - Maximum Non-Repetitive Surge Current
10000 Instantaneous On-state Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
1 Steady State Value R thJC= 0.17 K/W (DC Operation) 0.1
1000
T J= 25C 100 T J = 125C
Transient Thermal Impedance Z thJC(K/W)
0.01 IRK.F112.. Series Per Junction 0.001 0.001
IRK.F112.. Series Per Junction 10 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0.01
0.1
1
10
100
Instantaneous On-state Voltage (V)
Square Wave Pulse Duration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
6
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IRK.F112.. Series
Bulletin I27091 rev. A 09/97
Maximum Reverse Recovery Charge - Qrr (C) IRK.F112.. Series T J = 125 C
I TM = 500 A 300 A 200 A
Maximum Reverse Recovery Current - Irr (A)
160 140 120 100 80 60 40 20 10
50 A
140 120 100 80 60 40 20 10 IRK.F112.. Series T J = 125 C
I TM= 500 A 300 A 200 A 100 A 50 A
100 A
20
30
40
50
60
70
80
90 100
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovery Charge Characteristics
1E4
IRK.F112.. Series Sinusoidal Pulse T C = 90 C Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Fig. 10 - Reverse Recovery Current Characteristics
Peak On-state Current (A)
tp
Snubber circuit R s = 47 ohms C s = 0.22 F V D= 80% V DRM 50 Hz
1E3
1000
150 400 2500 5000
50 Hz
2500 5000
1000
400
150
tp
IRK.F112.. Series Sinusoidal Pulse T C = 60 C
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
1E4
IRK.F112.. Series Trapezoidal Pulse T C = 90C, di/dt 50A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
IRK.F112.. Series Trapezoidal Pulse T C = 90C, di/dt 100A/s Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% V DRM
Peak On-state Current (A)
tp
tp
50 Hz
1E3
400 1000 2500 5000
150
400 1000 2500 5000
50 Hz 150
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
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7
IRK.F112.. Series
Bulletin I27091 rev. A 09/97
1E4
IRK.F112.. Series Trapezoidal Pulse T C= 60C, di/dt 50A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
IRK.F112.. Series Trapezoidal Pulse T C = 60C, di/dt 100A/s Snubber circuit R s = 47 ohms C s = 0.22 F V D = 80% V DRM
Peak On-state Current (A)
tp
tp
50 Hz
1E3
1000 2500 5000
150 400
1000 2500 5000 400
50 Hz
150
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
1E4
10 joules per pulse
10 joules per pulse 5 2.5 1 0.5 0.25 0.1 0.05
Peak On-state Current (A)
1E3
0.05
0.5 0.25 0.1
1
2.5
5
1E2
IRK.F112.. Series Sinusoidal pulse tp
IRK.F112..Series Trapezoidal Pulse di/dt 50A/s
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 s (a) (b)
Tj=-40 C Tj=25 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W,
tp = tp = tp = tp =
20ms 10ms 5ms 3.3ms
Tj=125 C
1
(1)
(2)
(3) (4)
VGD IGD 0.1 0.01 0.1 IRK.F112.. Series 1 Instantaneous Gate Current (A) Frequency Limited by PG(AV) 10 100
Fig. 15 - Gate Characteristics
8
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